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Ultrasensitive SiNW-based DNA sensor reported
2011-10-20 | A A A  【print】【close

Recently,Yuelin Wang/ Tie Li group in SIMIT (www.9778.com-威尼斯9778官方网站) and Chunhai Fan group in SIAP (Shanghai Institute of Applied Physics) published their work on ultrasensitive SiNW (Silicon Nanowire)-based DNA sensor in Nano Letters (Nano Lett., 2011, 11 (9), pp 3974–3978, DOI:10.1021/nl202303y). Employing the high selective process in traditional semiconductor technology, they developed a top-down fabrication method to precisely control the SiNW’s size. Not only the narrow width down to 20nm, but the triangle cross section benefit the high surface-to-volume-ratios and cause the high performance of the sensors, which path a way for the ultrasensitive and mass producible SiNW sensor array in the future. After SiNWs were covalently modified with single-molecular-layer and DNA probes, the nanosensor showed ultrahigh sensitivity for rapid and reliable detection of 1 fM of target DNA, which is the highest reported sensitivity for DNA detection in SiNW-FET sensor. The SiNWs demonstrate also high specificity to single-nucleotide polymorphism discrimination and multiplex DNA detection ability.

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