Jing Chen

Title: Professor
Subject: Microelectronics and Solid State Electronics
Phone: +86-021-62511070
Fax: +86-021-62524192
Address: 865 Changning Road, Shanghai,China, 200050


Prof. Jing Chen received her Ph.D. degree from威尼斯9778官方网站 (SIMIT) of Chinese Academy of Sciences (CAS) in 2002. From 2006 to 2011, she worked as an Associate Professor at the State Key Laboratory of Functional Materials for Informatics of SIMIT. From 2012 to the present, she served as a Professor professor in SIMIT. Her research interests are focused on the onmicroelectronic devices and materials, and currently her main research is on "SOI device and modeling". Prof. Jing Chen is the reviewer of international journals such as IEEE Transactions on Electron Devices, Thin Solid Films and Physicaetc. She is a project manager responsible for the sub-topics of the Major National project, Major project of CAS, the National Natural Science Foundation project, as well as the Basic Research project of Shanghai. Recently, as a leading scientist, Prof. Chen, together with her colleagues, took the lead and established a complete model database of 0.13 um SOI process in China, which was used and verified by SOI Library and ASIC chips with several companies and institutes. Meanwhile, the team developed new TDBC SOI devices which efficiently suppressed the floating-body effect in partially depleted SOI technology. Novel floating body/gate cells were fabricated with 0.13 um SOI technology which showed excellent endurance, fast write speed and low power consumption. Prof. Chen cultivated more than 10 graduate students who received Ph.D degree and M.S degree, and published more than 60 papers in the famous international journals such as IEEE Electron Device Lett., Appl. Phys. Lett, etc., and applied for more than 60 patents, including 26 authorized patents (8 US patents).  


Bachelor, Physical Education, 1996, Suzhou University

Master, Condensed Matter Physics, 1999, Suzhou University

Doctor, Materials Physics and Chemistry, 2002,威尼斯9778官方网站, Chinese Academy of Sciences


2012 - the Present, Professor, State Key Laboratory of Functional Materials for Informatics,威尼斯9778官方网站, Chinese Academy of Sciences

2006 - 2011, Associate Professor, State Key Laboratory of Functional Materials for Informatics,威尼斯9778官方网站, Chinese Academy of Sciences

2002 - 2005, Assistant Professor, IonBeam Laboratory,威尼斯9778官方网站, Chinese Academy of Sciences

major hornors

2005 First Prize of Shanghai Science and Technology Progress Award

2006 First Prize of National Scientific and Technological Progress Award

2007 Outstanding Science and Technology Achievement Award of Chinese Academy of Sciences


1993-1994 Assistant researcher for Shanghai Microsystems, July 1993 - May 1994 Visited Scholar at the Australian Federal Institute of Science and Industry. From 1994 to 2004, he served as an associate professor of Shanghai Microsystems, deputy director of the room, researcher, director of the room, assistant director, which in May 1996 - June 1998 as a "Humboldt" scholars went to Germany Rosendorf Research Center Visited the study, after returning to the Chinese Academy of Sciences ion beam development research laboratory director. In 1998 by the State Council issued a special government allowances, in 1999 by the National Outstanding Youth Science Fund. Since April 2004, he has been the deputy secretary and deputy director of Shanghai Microsystems. Since January 2007, he has been the secretary and deputy director of the Party Committee of Shanghai Microsystem, the long-term scientific and technological development plan of the country, and the deputy chief of the expert group of the major specialties of science and technology major project of "very large scale integrated circuit manufacturing technology and complete sets of technology" Technology Co., Ltd. Chairman of the Board. Since March 2009, he has been the secretary, executive deputy director and legal representative of Shanghai Microsystem. In August 2010, he was elected Vice Chairman of the 11th National Youth Federation. Since July 2010, he has been the director of Shanghai Microsystems. In June 2016, he was elected Vice Chairman of the Ninth National Committee of the Chinese Association for Science and Technology. The 18th Congress of the Communist Party of China


1. Weiwei He, Jing Chen*, Qingqing Wu, Jiexin Luo, Zhan Chai, Jianqiang Huang, Xi Wang, Floating Body Gate Cell with Fast Write Speed for Embedded Memory Applications, Electronics Letters, 52(12), (2016) 1011

2. Jianqiang Huang, Weiwei He, Jing Chen*, Jiexin Luo, Kai Lu, Zhan Chai,New Method of Total Ionizing Dose Compact Modeling in Partially Depleted Silicon-on-Insulator MOSFETs, Chinese Physics Letters,33(9), (2016) 82

3. Kai Lu, Jing Chen*, Jiexin Luo, Weiwei He, Jianqiang Huang, Zhan Chai, and Xi Wang, Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs, Chinese Physics B, 24(8), (2015)088501

4. Kai Lu, Jing Chen*, Jiexin Luo, Jun Liu, Qingqing Wu, Zhan Chai, and Xi Wang, Improvement of RF Performance by Using Tunnel Diode Body Contact Structure in PD SOI nMOSFETs, IEEE Electron Device Letters, 35(1), (2014) 15

5. Jiexin Luo, Jing Chen*, Zhan Chai, Kai Lu, Weiwei He, Yan Yang, En Xia Zhang, Daniel M. Fleetwood, Xi Wang,Total Dose Effects in Tunnel-Diode Body-Contact SOI nMOSFETs, IEEE Transaction on Nuclear Science, 61(6), (2014) 3018

6. Qingqing Wu, Jing Chen*, Zhichao Lu, Zhenming Zhou, Jiexin Luo, Zhan Chai, Tao Yu, Chao Qiu, Le Li, Albert Pang, Xi Wang, and Jerry G. Fossum, Experimental Demonstration of the High-Performance Floating-Body/Gate DRAM Cell for Embedded Memories, IEEE Electron Device Letters, 33(6), (2012) 743

7. Jiexin Luo, Jing Chen*, Qingqing Wu, Zhan Chai, Jianhua Zhou, Tao Yu, Yaojun Dong, Le Li, Wei Liu, Chao Qiu, and Xi Wang, A Tunnel Diode Body Contact (TDBC) Structure for High-Performance SOI MOSFETs, IEEE Transactions on Electron Devices, 59(1), (2012) 101

8. Jing Chen*, Jiexin Luo, Qingqing Wu, Zhan Chai, Tao Yu, Yaojun Dong, Xi Wang, A Tunnel Diode Body Contact Structure to Suppress the Floating-Body Effect in Partially Depleted SOI MOSFETs, IEEE Electron Device Letters, 32(10), (2011) 1346

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