Researcher

Yonggang Zhang

Title: Professor
Subject: Compound semiconductor Optoelectronics
Phone: +86-021-62511070
Fax: +86-021-62524192
Email: ygzhang@mail.sim.ac.cn
Address: 865 Changning Road, Shanghai,China, 200050

RESUME

Zhang Yonggang, male, born in Sep. 1957, a native of Shanghai. He received a B.S degree in semiconductor device from Nanjing Institute of Posts and Telecommunications in 1982, an M.S degree in semiconductor physics from Shanghai Institute of Metallurgy, CAS in 1987,and his Ph.D. degree in semiconductor physics also from Shanghai Institute of Metallurgy, CAS in 1996 (in active service). He served at Zhenjiang Semiconductor Device Factory during 1975-1978, and worked a teacher at Nanjing Posts and Telecommunications School during 1982-1984. He joined Shanghai Institute of Metallurgy (now renamed as www.9778.com-威尼斯9778官方网站), CAS as research assistant since 1987, associate researcher since 1989, associate research professor since 1992 and research professor since 1996. He has been Ph.D. advisor since 2001, and a senior member of IEEE since 2003. He has been actively engaged in the research of optoelectronic materials, device and applications for more than 30 years.

education

B.S degree  Nanjing Institute of Posts and Telecommunications

M.S degree  Shanghai Institute of Metallurgy

Ph.D degree  Shanghai Institute of Metallurgy

work experience

Zhenjiang Semiconductor Device Factory during 1975-1978

Teacher at Nanjing Posts and Telecommunications School during 1982-1984.

Research assistant, associate researcher, an associate research professor, a research professor in Shanghai Institute of Metallurgy (now renamed as www.9778.com-威尼斯9778官方网站), CAS

Ph.D. advisor since 2001

Senior member of IEEE since 2003 

HONORS AND AWARDED RESEARCH FUNDS

Scientific awards:

[1] 2015 Bronze award of technical innovation of Shanghai municipal on “2-3 mm band InP based Sb-free QW-LD” (2)

[2] 2013 Silver award of progress in science and technology of Shanghai municipal on “SWIR InGaAs epitaxial materials for space remote sensing applications” (1)

[3] 2010 Silver award of progress in science and technology of Shanghai municipal on “MIR/FIR InAlAs/InGaAs/InPQCL materials”(4)

[4] 1999 Bronze award of progress in science and technology of Shanghai municipal on “GSMBE and physics of InP baser OEIC structures” (2)

[5] 1998 Bronze award of progress in science and technology of CAS on “Novel photodetectors in different bands” (2)

[6] 1997Bronze award of progress in science and technology of Shanghai municipal on “Ultra-high-speed photodetectors” (1)

[7] 1996 Silver award of progress in science and technology of CAS on “MBE growth of ultra-thin multi-layer HBT heterostructure materials” (6)

[8] 1996Bronze award of progress in science and technology of CAS on “GSMBE growth of InP based and P containing III-V microstructuralmaterials” (4)

[9] 1995 Silver award of natural science of CAS on Physical bases of ultra-long wavelength (2-5 mm)infrared optical communications” (6)

Personal honors

[1] 1999 Government special allowance of the State Council

[2] 1994 Tracking aid ofRising-star program of Shanghai municipal

[3] 1992 Rising-star program of Shanghai municipal

SELECTED PUBLICATIONS

Books: (2007-2017) 

1. Zhang Yong-gang,Gu Yi, Ma Ying-jie, Semiconductor Spectroscopy Instrumentations and Technology, in Book Series of Semiconductor Science and Technology, Science Press 2016,  ISBN: 978-7-03-047222-9 (in Chinese)

Book chapters:

1. Yi Gu, Yong-gang Zhang,“InP-based antimony-free MQW lasers in 2-3 ?m band”,Chapter 4 in Optoelectronics- Materials and Devices, Sergei L. Pyshkin and John Ballato(Eds.) InTech, 2015.ISBN 978-953-51-2174-9, pp83-107.

2. Zhang Yong-gang,“Emission spectroscopy in the Mid-infrared using FTIR spectrometry” Chapter 26 in The Wonder of Nanotechnology: Quantum Optoelectronic Devices and applications, ManijehRazeghi, Leo Esaki, Klaus von Klitzing (Eds.) SPIE Press,Bellingham, WA, 2013 ,ISBN: 978-0-8194-9596-9, pp673-691

3. Yong-gang Zhang, Yi Gu, “Al(Ga)InP-GaAs photodiodes tailored for specificwavelengthrange”,Chapter 8 in Photodiodes-from Fundamentals to Applications,  Ilgu Yun(Ed.) InTech, 2012. ISBN: 978-953-51-0895-5,pp.261-287

4. Yong-gang Zhang, Yi Gu, “Gas source MBE grown wavelength extending InGaAs photodetectors”,Chapter 17 in Advances in Photodiodes, Gian Franco DallaBetta (Ed.) InTech, 2011. ISBN: 978-953-307-163-3, pp.349-376

SCI papers:

1. Yingjie Ma,Yonggang Zhang,Yi Gu,Xingyou Chen,Peng Wang,Bor-ChauJuang,Alan Farrell,Baolai Liang,Diana L.Huffaker,Yanhui Shi,WanyanJi,Ben Du,Suping Xi,Hengjing Tang,Jiaxiong Fang, “Enhanced carrier multiplication in InAs quantumdots for bulk avalanche photodetector applications”Advanced Optical Materials,1601023 (2017)

2. Yong-gang Zhang, Yi Gu, Xing-you Chen, Ying-jie Ma, Xue Li, Xiu-mei Shao, Hai-mei Gong, Jia-xiongFang,“An effective indicator for evaluation of wavelength extending InGaAs photodetector technologies”Infrared Physics & Technology, 83, 45-50, (2017)

3. Y. Gu, Y.G. Zhang, X.Y. Chen, Y.J. Ma, W.Y. Ji, S.P. Xi, B. Du, Y.H. Shi, A.Z. Li,Metamorphic InAs quantum well lasers on InP substrates with differentwell shapes and waveguides” J. Crystal Growth, in press, (2017). 

4. X. Y. Chen, Y. Gu, Y. G. Zhang, X. L. Ji, S. P. Xi, B. Du, Y. J. Ma, W. Y.Ji, Y. H. Shi, A. Z. Li “Analysis of dark currents and deep level traps in InP- and GaAsbasedIn0.83Ga0.17As photodetectors” J. Crystal Growth, in press, (2017).

5. Y.J.Ma,Y.G. Zhang, Y. Gu,X. Y.Chen,Y. H. Shi, W. Y. Ji, S. P. Xi, B. Du, H. J. Tang, Y. F. Li,J. X. Fang“2.25 μm avalanche photodiodes using metamorphicabsorber and lattice-matched multiplier on InP”Photon. Technol. Lett., 29(1), 55-58, (2017) 

6. Y. Gu, Y. G. Zhang, X. Y. Chen, Y. J. Ma, S. P. Xi, B. Du, W. Y. Ji, Y. H. Shi “Metamorphic InAs1-xBix/In0.83Al0.17As quantum well structures on InP for mid-infrared emission” Appl. Phys. Lett.,109,122102,(2016)  DOI: 10.1063/1.4963129

7. X. Y. Chen, Y. Gu, Y. G. Zhang, S. P. Xi, B. Du, Y. J. Ma, W. Y. Ji,Y. H. Shi, “Characteristics of InGaAsBi with various lattice mismatches on InP substrate”AIP Advances,6,075215,(2016)

8. ZHANG Yong-gang, GU Yi, CHEN Xing-you, MA Ying-jie, Cao Yuan-ying, ZHOU Li, XI Su-ping, Du Ben, LI Ai-zhen, LI Hsby, “InP-based antimony-free lasers and photodetectors in 2-3 μm band” J. Infrared Millim. Waves,35(3), 275-280, (2016)

9. Xingyou Chen, Zhenzhong Zhang, Bin Yao, Yonggang Zhang, Yi Gu, Pengcheng Zhao, Binghui Li, DezhenShen,“The effect of boron on the doping efficiency of nitrogen in ZnO”Journal of Alloys and Compounds 672,260-264,(2016) 

10. Yingjie Ma, Yonggang Zhang, Yi Gu, Xingyou Chen, Yanhui Shi, WanyanJi, SupingXi, Ben Du, Hengjing Tang, Yongfu Li, Jiaxiong Fang,“Impact of etching on the surface leakage generation in mesa-type InGaAs/InAlAs avalanche photodetectors” Optics Express,24(7), 7823-7834,(2016)

11. ZHANG Yong-gang, XI Su-ping, ZHOU Li, GU Yi, CHEN Xing-you, MA Ying-jie, Du Ben “Correction of intensity of emission spectra in a wide wave number range measured by FTIR” J. Infrared Millim. Waves,35(1), 63-67, (2016)

12. B. Du, Y. Gu, Y. G. Zhang, X. Y. Chena, S. P. Xia, Y. J. Ma, W. Y. Ji, Y. H. Shi, X. Li, H. M. Gong,“Effects of continuously or step-continuously graded buffer on the performance of wavelength extended InGaAs photodetectors” J. Crystal Growth, 440, 1-5, (2016)

13. S. P. Xi, Y. Gu, Y. G. Zhang, X. Y. Chen, Y. J. Ma, L. Zhou, B. Du, X. M. Shao, J. X. Fang, “InGaAsP/InP photodetectors targeting on 1.06 μm wavelength detection”Infrared Physics & Technology, 75, 65-69, (2016)

14. Y. Gu, Y. G. Zhang, X. Y. Chen, Y. J. Ma, S. P. Xi, B. Du, Hsby Li“Nearly lattice-matched short-wave infrared InGaAsBi detectors on InP” Appl. Phys. Lett., 108, 032102,(2016) 

15. Y. Gu, Y. G. Zhang, X. Y. Chen, S. P. Xi, B. Du, Y. J. Ma,“Effect of bismuth surfactant on InP-based highly strained InAs/InGaAs triangular quantum wells” Appl. Phys. Lett., 107(22), 121104,(2015) 

16. ZHANG Yong-gang, ZHOU Li, GU Yi, MA Ying-jie, CHEN Xing-you, SHAO Xiu-mei, GONG Hai-mei, FANG Jia-xiong,“Correction of response spectra of quantum type photodetectors measured by FTIR” J. Infrared Millim. Waves,34(6), 737-743, (2015)

17. Yingjie Ma, Yonggang Zhang, Yi Gu, Xingyou Chen, Suping Xi, Ben Du,Hsby Li, “Tailoring the performances of low operating voltage InAlAs/InGaAs avalanche photodetectors”Optics Express,23(15), 19278-19287,(2015)

18. S. P. Xi, Y. Gu, Y. G. Zhang, X. Y. Chen, L. Zhou, A. Z. Li, Hsby. Li, “Effects of continuously graded or step-graded InxAl1-xAs buffer on theperformance of InP-based In0.83Ga0.17As photodetectors” J. Crystal Growth, 425, 337-340,(2015) 

19. X. Y. Chen, Y. Gu, Y. G. Zhang, S. P. Xi, Z. X. Guo, L. Zhou, A. Z. Li, Hsby. Li, “Optimization of InAlAs buffers for growth of GaAs-based high indium contentInGaAs photodetectors” J. Crystal Growth, 425, 346-350,(2015) 

20. Y. Gu, Y. G. Zhang, X. Y. Chen, Y. Y. Cao, L. Zhou, S. P. Xi, A. Z. Li, Hsby. Li, “Effects of well widths and well numbers on InP-based triangular quantum welllasers beyond 2.4 μm”J. Crystal Growth, 425, 376-380,(2015) 

21. Y. Gu, Y. G. Zhang,Y. J. Ma, L. Zhou, X. Y. Chen, S. P. Xi, B. Du,“InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsedmode on a metamorphic buffer”Appl. Phys. Lett., 106,121102,(2015)

22. Yingjie Ma, Yi Gu,Yonggang Zhang,Xingyou Chen,Suping Xi,ZoltanBoldizsar,  Li Huang,Li Zhou“Carrier scattering and relaxation dynamics in n-type In0:83Ga0:17As as a function of temperature and doping density”Journal of Materials Chemistry C, 3(12), 2872—2880 (2015) 

23. Ying-Jie Ma, Yong-Gang Zhang, Yi Gu, Xing-You Chen, LiZhou, Su-Ping Xi, and Hao-Si-Bai-Yin Li,“Low operating voltage and small gain slope of InGaAs APDs with p type multiplication layer”IEEE Photon. Technol. Lett.,27(6), 661-664, (2015)

24. Y. Gu, L. Zhou, Y. G. Zhang, X. Y. Chen, Y. J. Ma, S. P. Xi, Hsby Li, “Dark current suppression in metamorphic In0.83Ga0.17As photodetectors with In0.66Ga0.34As/InAs superlattice electron barrier”Appl. Phys. Express., 8, 022202, (2015)

25. L. Zhou, Y. G. Zhang, Y. Gu, Y. J. Ma, X. Y. Chen, S. P. Xi, Hsby. Li, “Effects of material parameters on the temperature dependent spectral responseofIn0.83Ga0.17As photodetectors” J. Alloys and Compounds,619(1), 52-57(2015)

26. Yong-gang Zhang, Ke-hui Liu, Yi Gu, Li Zhou, Hsby Li, Xing-you Chen, Yuan-ying Cao, Su-ping Xi “Evaluation of the performance correlated defects metamorphic InGaAs photodetector structures through plane-view EBIC”Semicon. Sci. Technol.29, 035018,( 2014)

27. CAO Yuan-Ying, GU Yi, ZHANG Yong-Gang, LI Yao-Yao, FANG Xiang, LI Ai-Zhen, ZHOU Li, LI Hao-Si-Bai-Yin“InAs/InGaAs digital alloy strain-compensated quantum well lasers”J. Infrared Millim. Waves, 33(3), 213-217, (2014)

28. Yi Gu, Yonggang Zhang, Yuanying Cao, Li Zhou, Xingyou Chen, Haosibaiyin Li, Suping Xi,“2.4-?m InP-based antimony-freetriangular quantum well lasers in continuous-wave operation above room temperature”Appl. Phys. Express,7(3), 032701,(2014)

29. X. Y. Chen, Y. G. Zhang, Y. Gu, L. Zhou, Y. Y. Cao, X. Fang, Hsby. Li, “GaAs-based In0.83Ga0.17As photodetector structure grown by gas source molecular beam epitaxy” J. Crystal Growth,393,75-80,(2014)

30. Yuan-Ying Cao, Yong-Gang Zhang, Yi Gu,Xing-You Chen,Li Zhou,Hao-Si-Bai-Yin Li“Improved performance of 2.2?m InAs/InGaAs QW lasers on InP by using triangularwells”IEEE Photon. Technol. Lett., 26(6), 571-574,(2014)

31. L Zhou, Y G Zhang, X Y Chen, Y Gu, H S B Y Li, Y Y Cao, S P Xi“Dark current characteristics of GaAs-based 2.6 μm InGaAsphotodetectors on different types of InAlAs buffer layers” J. Phys. D,47, 085107 (2014)

32. Yuanying Cao, Yonggang Zhang, Yaoyao Li, Yi Gu, Aizhen Li, Haosibaiyin Li, “Fabrication of column shape twodimensional photonic crystals by holographic lithography using double development”J. Infrared Millim. Waves, 33(1), 54-58, (2014)

33. Yi Gu, Kai Wang, Haifei Zhou, Yaoyao Li, Chunfang Cao, Liyao Zhang, Yonggang Zhang, Qian Gong, Shumin Wang“Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy”Nanoscale Research Letters,9,24,(2014)

34. FANG Xiang,GU Yi, ZHANG Yong-Gang?, ZHOU Li, WANG Kai, LI Hao-Si-Bai-Yin,LIU Ke-Hui, CAO Yuan-Ying, “Effects of compositional overshoot on InP based InAlAs metamorphic graded buffer”J. Infrared Millim. Waves,32(6), 481-485,(2013)

35. Y Gu, X Y Chen,Y G Zhang?, Y Y Cao, X Fang, H S B Y Li, “Type-I mid-infrared InAs/InGaAs quantum well lasers on InP-based metamorphicInAlAs buffers”J. Phys. D,46, 505103 (2013)

36. Y. Gu,Y. G. Zhang, K. Wang, A. Z. Li, Y. Y. Li,“Effects of growth temperature and buffer scheme on characteristics ofInP-based metamorphic InGaAs photodetectors” J. Crystal Growth,378,65-68(2013)

37. L. Zhou, Y. Gu, Y. G. Zhang?, K. Wang, X. Fang, Y. Y. Cao, A. Z. Li, Hsby. Li,“Performance of gas source MBE grown InAlGaAs photovoltaic detectors tailored to 1.4 ?m” J. Crystal Growth,378, 579-582(2013)

38. L. Zhou, Y. G. Zhang, Y. Gu, X. Y. Chen, Y. Y. Cao, Hsby. Li,“Absorption coefficients of In0.8Ga0.2As at room temperature and 77 K”J. Alloys and Compounds,576, 336-340(2013) 

39. Y. Y. Cao, Y. G. Zhang, Y. Gu, X. Y. Chen, L. Zhou, Hsby. Li, “2.7 ?mInAs quantum well lasers on InP-based InAlAs metamorphic buffer layers”Appl. Phys. Lett., 102, 201111,(2013)

40. Y. Gu, Y. G. Zhang, X. Y. Chen, Y. Y. Cao, X. Fang , G. Q. Ding, L. Zhou, “InAs/In0.83Al0.17As quantumwells on GaAs substrate with type-I emission at 2.9 μm”Appl. Phys. Lett., 102, 121110, (2013)

41. LI Cheng, ZHANG Yong-gang , GU Yi, WANG Kei,LI Hao-si-bai-yin, LI Xue, FANG Xiang,“Analysis and evaluation of uniformity of SWIR InGaAs FPA―Part II: processing issues and overall effects” Infrared Physics & Technology,58(1), 69-73, (2013)

42. Gu Yi, Zhang Yong-Gang, Song Yu-Xin, Ye Hong, Cao Yuan-Ying, Li Ai-Zhen, Wang Shu-Min, “Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence” Chin. Phys. B, 22(3), 037802, (2013)

43. Y.Y. Li, A.Z. Li, Y. Gu, Y.G. Zhang, H.S.B.Y. Li, K. Wang, X. Fang, “The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 μm” J. Crystal Growth,378, 587-590(2013)

44. Yi Gu, Yonggang Zhang?,Kai Wang, Xiang Fang, Kehui Liu, “InAlAs graded metamorphic buffer with digital alloy intermediate layers”Jpn. J. Appl. Phys., 51,080205,(2012)

45. Y. G. Zhang,Y. Gu, K. Wang, X. Fang, A. Z. Li,K. H. Liu, “Fourier transform infrared spectroscopy approach for measurements of photoluminescence and electroluminescence in mid-infrared” Rev. Sci. Instrum. 83(5), 053106(2012)

46. Y. G. Zhang,Y. Gu, Y. Y. Li, A. Z. Li, C. Li, Y. Y. Cao, L. Zhou, “An effective TDLS setup using homemade driving modules for evaluation of pulsed QCL”Appl. Phys.B, 109(3), 541-548,(2012)

47. K. Wang,Y. Gu, X. Fang,C. Li, Hsby Li, Y. G. Zhang, “Gas source MBE growth of lattice matched quaternary InAlGaAs on InP substrate”J. Infrared Millim. Waves, 31(5), 385-388,(2012)

48. Y. Gu, K. Wang,C. Li, X. Fang, Y. Y. Cao, Y. G. Zhang, “High indium content InGaAs photodetector: with InGaAs or InAlAs graded buffer layers”J. Infrared Millim. Waves, 30(6),481-485,(2011)

49. GU Yi, ZHANG Yong-gang , LI Cheng, WANG Kai,LI Hao-si-bai-yin, LI Xue, FANG Xiang,“Analysis and evaluation of uniformity of SWIR InGaAs FPA―Part I: material issues” Infrared Physics & Technology,54(6), 497-502 (2011)

50. Y. Gu, Y. G. Zhang,K. Wang,X. Fang,C. Li, Y. Y. Cao, A. Z. Li,Y. Y. Li, “InP-based InAs/InGaAs quantum wells with type-I emission beyond 3 μm”Appl. Phys. Lett., 99, 081914, (2011)

51. C. Li, Y. G. Zhang, Y. Gu, K. Wang, A. Z. Li, Hsby Li, X. M. Shao and J. X. Fang, “Gas source MBE grown Al0.52In0.48P photovoltaic detector”J. Crystal Growth,323(1), 501-503,(2011)

52. Y. G. Zhang, C. Li, Y. Gu, K. Wang, Hsby Li, X. M. Shao and J. X. Fang, “GaInP-AlInP-GaAs Blue Photovoltaic Detectors with Narrow Response Wavelength Width”IEEE Photon. Technol. Lett.,22(12), 944-946, (2010)

53. Gu Yi, Wang Kai, Li Yao-Yao, Li Cheng, Zhang Yong-Gang “InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 ?m” Chin. Phys. B ,19(7), 077304,(2010)

54. Y. Gu, C. Li, K. Wang, Hsby Li, Y. Y. Li, Y. G. Zhang, “Wavelength extenden InGaAs/InP-based photodetector structures with lattice mismatch up to 2.6%”J. Infrared Millim. Waves, 29(2), 81-86,(2010)

55. Cheng Li, Yonggang Zhang, Kei Wang,Yi Gu, Haosibaiyin Li, Yaoyao Li, “Distinction investigation of InGaAs photodetectors cutoff at 2.9 μm” Infrared Physics & Technology,53(3),(2010),173-176

56. Zhang Xiao-jun, Zhang yong-gang,“Resonate modes in photoacoustic cell for gas sensing”J. Infrared Millim. Waves,29(5),321-325,(2010)

57. Yonggang Zhang, Yi Gu, ZhaobingTian, Aizhen Li, Xiangrong Zhu, Kei Wang, “Wavelength extended InGaAs/InAlAs/InP photodetectors using n-on-p configuration optimized for back illumination” Infrared Physics & Technology,52,(2009),52-56

58. Y. G. Zhang, Y. Gu, Z. B. Tian, K. Wang, X. R. Zhu,  A. Z. Li, Y. L. Zheng, “Performance of gas source MBE grown wavelength extended InGaAs photodetectors with different buffer structures”J. Crystal Growth,311,(2009), 1881-1884

59. Y. Gu, Y. G. Zhang, K. Wang, A. Z. Li, Y. Y. Li  “Optimization ofAlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4?m range” J. Crystal Growth,311,(2009), 1935-1938

60. GU Yi, ZHANG Yong-Gang, LI Ai-Zhen, WANG Kai, LI Cheng, LI Yao-yao, “Structural and photoluminescence properties of highly strain-compensated InAlAs/InGaAs superlattice”Chin. Phys. Lett.,26(7), (2009), 077808

61. K. Wang,Y. G. Zhang,Y. Gu, C. Li, HSBY. Li, Y. Y. Li,“Improving the performance of wavelength extended InGaAs photodetectors by using digital graded hetero interfaces supperlattice”J. Infrared Millim. Waves,28(6),(2009),405-409

62. Y. Gu, H. Li, A. Z. Li, Y. Y. Li, L. Wei, Y. G. Zhang?, K. Wang, Y. L. Zheng “Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE” J. Crystal Growth,311,(2009),1929-1931

63. Yong-gang Zhang, Yi Gu, Kai Wang, Ai-zhen Li, Cheng Li“Properties of gas source molecular beam epitaxy grown wavelength extended InGaAs photodetector structures on linear graded InAlAs buffer”Semicon. Sci. Technol.23,(2008),125029

64. Yonggang Zhang, Yi Gu, ZhaobingTian, Aizhen Li, Xiangrong Zhu, Yanlan Zheng, “Wavelength extended 2.4 mm heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations” Infrared Physics & Technology,51,(2008),316-321

65. ZHANG Yong-Gang, GU Yi,Zhang Xiao-jun, Li Ai-zhen, Tian Zhao-bing “Gas Sensor Using a Robust Approach under Time Multiplexing Scheme with a Twin Laser Chip for Absorption and Reference”Chin. Phys. Lett.,25(9), (2008), 3246-3249

66. GU Yi, ZHANG Yong-Gang,“Propoties of Strain Compensated Symmetrical Triangular Quantum Wells Somposed of InGaAs/InAs Chirped Superlattice Grown Using Gas Source Molecular Beam Epitaxy”Chin. Phys. Lett.,25(2), (2008), 726-729

67. Tian Zhao-Bing,Gu Yi, Wang Kai, ZHANG Yong-Gang, “Gas source MBE grown metamorphic InGaAs photodetectors using InAlAs buffer and cap layers with cou-off wavelength up to 2.7 μm ” Chin. Phys. Lett.,25(6), 2292,(2008)

68. Tian Zhao-Bing,Gu Yi, ZHANG Yong-Gang, “Quantum efficiency optimization of InP based In0.53Ga0.47As photodetectors” J. Infrared Millim. Waves,27(2), 81, (2008)

69. ZHANG Yong-Gang, Zhang Xiao-Jun, Zhu Xiang-Rong, Li Ai-Zhen, Liu Sheng, “Tunable Diode Laser Absorption Spectroscopy Detection of N2O at 2.1 mm Using Antimonide Laser and InGaAs Photodiode” Chin. Phys. Lett.,24(8), (2007), 2301

70. ZHANG Yong-Gang, Tian Zhao-Bing, Zhang Xiao-Jun, Gu Yi, Li Ai-Zhen, Zhu Xiang-Rong, Zheng Yan-Lan, Liu Sheng, “An Innovative Gas Sensor with on Chip Reference Using Monolithic Twin Laser” Chin. Phys. Lett., 24(10), (2007), 2839

71. Y. Gu, Y. G. Zhang, A. Z. Li, H. Li, “Optical properties of gas source MBE grown AlInP on GaAs”, Mater. Sci. Eng. B139 (2007) 246

72. GU Yi, ZHANG Yong-gang, LIU Sheng “Strain Compensated AlInGaAs/InGaAs/InAs Triangular Quantum Wells for Lasing Wavelength beyond 2mm” Chin. Phys. Lett.,24(11), (2007), 3237

 
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