Researcher

Qian Gong

Title: Professor
Subject: 
Semiconductor materials, physics and devices

Phone: +86-021-62511070
Fax: +86-021-62524192
Email: qgong@mail.sim.ac.cn
Address: 865 Changning Road, Shanghai,China, 200050

RESUME

Qian Gong received a B.S. degree in applied physics from Beijing Normal University, Beijing, China, in 1993 and his Ph.D. degree from the Institute of Semiconductors, Chinese Academy of Sciences, Beijing, in 1998.From 1999 to 2001, he served at the Paul Drude Institute for Solid State Electronics, Berlin, Germany, where his research involved investigation of molecular-beam epitaxy of low-dimensional semiconductor structures. From 2001 to 2004, he served at COBRA Inter-University Research Institute, Eindhoven University of Technology, Eindhoven, The Netherlands, working on molecular-beam epitaxy of InAs quantum dots on GaAs and InP substrates, respectively. In 2004, he joined www.9778.com-威尼斯9778官方网站, Chinese Academy of Sciences, Shanghai, China. His current research interests include molecular-beam epitaxy of low-dimensional semiconductor materials, single mode semiconductor lasers, silicon photonics, and external cavity tunable semiconductor lasers.

education

B.Sc Physics, 1993, Beijing Normal University

PhD Semiconductor Materials and devices, 1998, Institute of Semiconductors, CAS

work experience

2004.6-present www.9778.com-威尼斯9778官方网站, CAS, Professor

2001.2-2004.6 COBRA Institute, Eindhoven University of Technology, The Netherlands

1999.3-2001.2 Paul-Drude Institute, Berlin, Germany Postdoc researcher

HONORS

Awarded as National 100-Telent Program (Chinese Academy of Sciences)

SELECTED PUBLICATIONS

1. H. X. Xu, H. L. Wang, Q. Gong, J. Y. Yan, C. F. Cao, Y. Wang, J. J. Gao, W. P. Zhao, "External cavity lasers using stripe mirrors with different mirror width", Journal of Modern Optics, (2017)

2. Peng Wang, Qimiao Chen, Xiaoyan Wu, Chunfang Cao, Shumin Wang, and Qian Gong, "Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure", Nanoscale Research Letters11, 119(2016).

3. Peng Wang, Wenwu Pan, Xiaoyan Wu, Juanjuan Liu, Chunfang Cao, Shumin Wang, and Qian Gong, "Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots", Nanoscale Research Letters11, 280(2016).

4. Peng Wang, Wenwu Pan, Xiaoyan Wu, Chunfang Cao, Shumin Wang, and Qian Gong, "Heteroepitaxy growth of GaAsBi on Ge(100) substrate by gas source molecular beam epitaxy”, Applied Physics Express9, 045502(2016).

5. Peng Wang, Wenwu Pan, Chunfang Cao, Xiaoyan Wu, Shumin Wang, Qian Gong,"Influence of doping in InP buffer on photoluminescence behavior of InPBi",Jpn. J. Appl. Phys.55, 115503(2016).

6. J. Y. Yan, Q. Gong, J. J. Gao, C. F. Cao, Y. Wang, H. X. Xu, W. P. Zhao, H. L. Wang, “Analysis of mode-hop free tuning of folded cavity grating feedback lasers”, Appl. Opt.54, 8339(2015).

7. J. Y. Yan, Q. Gong, C. Z. Kang, H. X. Xu, C. F. Cao, Y. Y. Li, S. M. Wang, H. L. Wang, "Wavelength tuning of InAs quantum dot laser by micromirror device", J.Cryst. Growth425, 373(2015).

8. Y. Wang, Q. Gong, C. F. Cao, R. H. Cheng, J. Y. Yan, L. Yue, Y. Y. Li, A. Z. Li, S. M. Wang, J. Cui, H. X. Xu, H. L. Wang, S. G. Li, "A novel method to measure the internal quantum efficiency and optical loss of laser diodes", Photon. Tech. Lett.27, 1169(2015).

9. S. M. Wang, Q. Gong, Y. Y. Li, C. F. Cao, H. F. Zhou, J. Y. Yan, Q. B. Liu, L. Y. Zhang, G. Q. Ding, Z. F. Di, and X. M. Xie, "A novel semiconductor compatible path for nano-graphene synthesis using CBr4 precursor and Ga catalyst", Scientific Reports4, 4653(2014)

10. J. Y. Yan, Q. Gong, L. Yue, Q. B. Liu, R. H. Cheng, C. F. Cao, Y. Wang, S. M. Wang, “Growth of metamorphic InGaP layers on GaAs substrates”, J. Cryst. Growth 378, 141(2013).

11. P. Chen, Q. Gong, C. F. Cao, S. G. Li, Y. Wang, Q. B. Liu, L. Yue, Y. G. Zhang, S. L. Feng, C. H. Ma and H. L. Wang, “High performance external cavity InAs/InP quantum dot lasers”, Appl. Phys. Lett. 98, 121102(2011).

12. Q. Gong, P. Chen, S. G. Li, Y. F. Lao, C. F. Cao, C. F. Xu, Y. G. Zhang, S. L. Feng, C. H. Ma, and H. L. Wang, “Quantum dot lasers grown by gas-source molecular-beam epitaxy”, J. Cryst. Growth323, 450(2011).

13. S. G. Li, Q. Gong, Y. F. Lao, Y. G. Zhang, S. L. Feng, and H. L. Wang, “InAs/InP(100) quantum dot laser with high wavelength stability”, Electron. Lett. 46, 158(2010).

14. H. D. Yang, Q. Gong, S. G. Li, C. F. Cao, C. F. Xu, P. Chen, and S. L. Feng, “InAs/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy”,J. Cryst. Growth312, 3451(2010).

15. S. G. Li, Q. Gong, Y. F. Lao, H. D. Yang, S. Gao, P. Chen, Y. G. Zhang, S. L. Feng, and H. L. Wang, “Two-color quantum dot laser with tunable wavelength gap”, Appl. Phys. Lett. 95, 251111(2009).

16. J. Li, Q. Gong, S. G. Li, A. Z. Li and C. Lin, “Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy”, J. Cryst. Growth311, 1703(2009).

17. S. G. Li, Q. Gong, Y. F. Lao, K. He, J. Li, Y. G. Zhang, S. L. Feng, and H. L. Wang, “Room temperature continuous-wave operation of InAs/InP(100) quantum dot lasers grown by gas-source molecular-beam epitaxy, Appl. Phys. Lett. 93, 111109(2008).

18. Chuanhong Zhou, Qian Gong, Peijun Yao, Deyin Zhao, and Xunya Jiang, “Bulletlike light pulses in photonic crystals”,Appl. Phys. Lett.93, 061103(2008).

19. Huping Lei, Jun Chen, Gerard Nouet, Songling Feng, Qian Gong, and Xunya Jiang, “Photonic band gap structures in the Thue-Morse Lattice”,Phys. Rev. B75, 205109(2007).

20. Q. Gong, R. Noetzel, P.J.vanVeldhoven, T. J. Ejkemans, and J. H.Wolter, “Shape transition from InAs quantum dash to quantum dot on InP(311)A”,J. Cryst. Growth280, 413(2005).

21. Q. Gong, R. Noetzel, P.J.vanVeldhoven, and J. H.Wolter, “InAs/InP quantum dots emitting in the 1.55 um wavelengthregion by inserting ultrathin GaAs and GaP interlayers”,J. Crystal Growth278, 67(2005).

22. E.W.Bogaart, R. Noetzel, Q. Gong, J.E.Haverkort, andJ. H. Wolter, “Ultrafast carrier capture at room temperature in InAs/InPquantum dots emitting in the 1.55 um wavelength region”, Appl. Phys. Lett.86, 173109(2005). 

23. Q. Gong, P. Offermans, R. Noetzel, P.M.Koenraad, and J. H.Wolter, “Capping process of the InAs/GaAs quantum dots studied by cross-sectionalscanning tunneling microscopy”,Appl. Phys. Lett.85, 5697(2004). 

24. Q. Gong, R. Noetzel, P.J.vanVeldhoven, T. J. Ejkemans, and J. H.Wolter, “InAs/InP quantum dots emitting in the 1.55 um wavelengthregion by inserting submonolayerGaP interlayers”,Appl. Phys. Lett. 85,1404(2004). 

25. Q. Gong, R. Noetzel, P.J.vanVeldhoven, T. J. Ejkemans, and J. H.Wolter, “Wavelength tuning of InAs quantum dots grown on InP (100) bychemical-beam epitaxy”, Appl. Phys. Lett.84, 275(2004). 

26. Q. Gong, R. Noetzel, P.J.vanVeldhoven, and J. H.Wolter,“Continuous wavelength tuning of InAs quantum dots on InP (100) and (311)A substrates by chemical-beam epitaxy”, Physica E23, 435(2004).

27. J. He, R. Noetzel, P. Offermans, P. M. Koenraad, Q. Gong, G.J.Hamhuis, T.J.Eijkemans, and J.H.Wolter,“Formation of columnar (In,Ga)As quantum dots on GaAs(100)”,Appl. Phys. Lett.85, 2771(2004).

28. E.A.Patent, J.J.G.M.van der Tol, P.R.A.Binetti, Q. Gong, Y.S.Oei, R.Noetzel, J.E.M.Haverkort, P.J.van Veldhoven, J.H.Wolter, and M.K.Smit,”First integrated combiner based on self-switching in quantum dots”,IEEE Photon. Technol. Lett.16, 2308(2004). 

29. Q. Gong, R. Noetzel and J. H. Wolter,“Strain-driven (In,Ga)As growth instability on GaAs (311)A and (311)B: self-organization of template for InAs quantum dot nucleation control,J. Cryst. Growth251, 150(2003). 

30. Q. Gong, R. Noetzel, G. J. Hamhuis, T. J. Ejkemans, and J. H.Wolter, “Self-organized strain engineering on GaAs (311)B: Template formatonfor quantum dot nucleation control”, Appl. Phys. Lett.81,3254(2002).

31. Q. Gong, R. Noetzel, G. J. Hamhuis, T. J. Ejkemans, and J. H.Wolter, “Leveling and rebuilding: An approach to improve the uniformityof (In,Ga)As quantum dots”, Appl. Phys. Lett. 81, 1887(2002). 

32. Q. Gong, R. Noetzel, J. H. Wolter, H.-P. Schoenherr, andK. H. Ploog, “Distinct growth behaviours in molecular-beam epitaxy of(In,Ga)As on GaAs (311)A substrate”, J. Cryst. Growth242,104(2002). 

33. Q. Gong, R. Noetzel, H.-P. Schoenherr, and K. H. Ploog,“Molecular-beam epitaxy on shallow mesa gratings patterned on GaAs(311)Aand (100) substrates”,Applied Surface Science190, 480(2002).  

34. Q. Gong, R. Noetzel, H.-P. Schoenherr, and K. H. Ploog,“(In,Ga)As islands formed on shallow patterned GaAs(100) substrates bymolecular beam epitaxy”, Physica E 13, 1176(2002). 

35. Richard Noetzel and Qian Gong, “Novel lateral semiconductornanostructures on shallow-patterned high- and low-index GaAssubstrates”, Nanotechnology13, 705(2002).

36. Richard Noetzel, Qian Gong, M. Ramsteiner, U. Jahn,K.J.Friedland and K.H.Ploog, “Molecular beamepitaxy of quantumwires and quantum dots on patterned high-index substrates”,Microelectronics Journal33, 573(2002).

37. Wolfgang Braun, Vladimir M. Kaganer, AchimTrampert,Hans-Peter Schoenherr, Qian Gong, Richard Noetzel, Lutz Daeweritz,and Klaus H. Ploog, “Diffusion and incorporation: shape evolution duringovergrowth on structured substrates”, J. Cryst. Gro wth227-228, 51(2001).

38. Q. Gong, R. Noetzel, H.-P. Schoenherr, and K. H. Ploog,“Stable nonplanar surface formed on patterned (311)A GaAs substrate bymolecular-beam epitaxy”, Appl. Phys. Lett. 77, 3538(2000). 

39. Q. Gong, R. Noetzel, H.-P. Schoenherr, and K. H. Ploog,“Study of molecular beam epitaxy growth on patterned GaAs (311)Asubstrates with different mesa height”, J. Cryst. Growth 220, 23(2000).

40. Q. Gong, J. B. Liang, et. al.,“Analysis of atomic force microscopic results of InAs islands formed bymolecular beam epitaxy”, J. Cryst. Growth192, 376(1998).

 
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