Research Associate

Dawei Bi

Title: Associate Professor
Subject: SOI Space Application
Phone: +86-021-62511070
Fax: +86-021-62524192
Address: 865 Changning Road, Shanghai,China, 200050


Dawei Bi received his B.S. degree from the University of Science and Technology of China in 2005, and Ph.D. degree from威尼斯9778官方网站 (SIMIT), Chinese Academy of Sciences (CAS) in 2010. Since 2010, he worked at SIMIT as a Research Assistant and an Associate Professor. He is currently mainly engaged in the research on the specialty SOI technology development and applications in space environment. As a project manager, he is responsible for the National Natural Science Foundation project, the sub-topics of the Defense 973 project, and the open project of Microsatellite Lab.


B.S., Physics, 2005, University of Science and Technology of China

Ph.D., Microelectronics, 2010,威尼斯9778官方网站, Chinese Academy of Sciences


Research Assistant, SIMIT CAS, 2010-2014

Associate Professor, SIMIT CAS, 2015-the present


1. Influence of Si nanocrystal embedded in BOX on radiation and electrical properties of SOI wafer, Nuclear Instruments and Methods in Physics Research B, 2012;

2. Total Dose Irradiation-Induced Degradation of Hysteresis Effect in Partially Depleted Silicon-on-Insulator NMOSFETs, IEEETransactions on Nuclear Science, 2013;

3. Improving Total Dose Tolerance of Buried Oxides in SOI wafers by Multiple-step Si+ Implantation, IEEETransactions on Nuclear Science, 2014;

4. Investigation of the total dose response of partially depleted SOI MOSFET using TCAD, Microelectronics Journal, 2014;

5. Radiation Response of Pseudo-MOS Transistors Fabricated in Hardened Fully-depleted SIMOX SOI Wafers, Chinese Physics C, 2009;


National Natural Science Foundation project

Sub-topics of the Defense 973 project

Open project of Shanghai Microsatellite Lab

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