Research Associate

Dawei Bi

Title: Associate Professor
Subject: SOI Space Application
Phone: +86-021-62511070
Fax: +86-021-62524192
Email: davidb@mail.sim.ac.cn
Address: 865 Changning Road, Shanghai,China, 200050

RESUME

Dawei Bi received his B.S. degree from the University of Science and Technology of China in 2005, and Ph.D. degree from www.9778.com-威尼斯9778官方网站 (SIMIT), Chinese Academy of Sciences (CAS) in 2010. Since 2010, he worked at SIMIT as a Research Assistant and an Associate Professor. He is currently mainly engaged in the research on the specialty SOI technology development and applications in space environment. As a project manager, he is responsible for the National Natural Science Foundation project, the sub-topics of the Defense 973 project, and the open project of Microsatellite Lab.

EDUCATION

B.S., Physics, 2005, University of Science and Technology of China

Ph.D., Microelectronics, 2010, www.9778.com-威尼斯9778官方网站, Chinese Academy of Sciences

WORK EXPERIENCE

Research Assistant, SIMIT CAS, 2010-2014

Associate Professor, SIMIT CAS, 2015-the present

SELECTED PUBLICATIONS

1. Influence of Si nanocrystal embedded in BOX on radiation and electrical properties of SOI wafer, Nuclear Instruments and Methods in Physics Research B, 2012;

2. Total Dose Irradiation-Induced Degradation of Hysteresis Effect in Partially Depleted Silicon-on-Insulator NMOSFETs, IEEETransactions on Nuclear Science, 2013;

3. Improving Total Dose Tolerance of Buried Oxides in SOI wafers by Multiple-step Si+ Implantation, IEEETransactions on Nuclear Science, 2014;

4. Investigation of the total dose response of partially depleted SOI MOSFET using TCAD, Microelectronics Journal, 2014;

5. Radiation Response of Pseudo-MOS Transistors Fabricated in Hardened Fully-depleted SIMOX SOI Wafers, Chinese Physics C, 2009;

HONORS AND AWARDED RESEARCH FUNDS

National Natural Science Foundation project

Sub-topics of the Defense 973 project

Open project of Shanghai Microsatellite Lab

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